Intermetallic Compound Growth and Reliability of Cu Pillar Bumps Under Current Stressing

Abstract

Fine-pitch Cu pillar bumps have been adopted for flip-chip bonding technology. Intermetallic compound (IMC) growth in Cu pillar bumps was investigated as a function of annealing or current stressing by in situ observation. The effect of IMC growth on the mechanical reliability of the Cu pillar bumps was also investigated. It is noteworthy that Sn exhaustion was observed after 240 h of annealing when current stressing was not applied, and IMC growth rates were changed remarkably. As the applied current densities increased, the time required for complete Sn consumption became shorter. In addition, Kirkendall voids, which would be detrimental to the mechanical reliability of Cu pillar bumps, were observed in both Cu3Sn/Cu pillars and Cu3Sn/Cu under-bump metallization interfaces. Die shear force was measured for Cu pillar samples prepared with various annealing times, and degradation of mechanical strength was observed.