Abstract
One micrometer thick pure and hydrogenated Si films have been prepared by DC triode sputtering onto Si single crystals for coupled X ray and Infra-red characterization. Topological features of the amorphous relaxation process and transition to the microcrystalline state are described and associated with modifications of the atomic population under the peaks of the radial distribution function corresponding to intermediate range order (I.R.O.). Hydrogenated material I.R.O. lies in between that observed in unrelaxed and relaxed pure a. Si films. The indirect effect of SiH bond conformation on the Si network structure is also investigated.
Published Version
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