Interlayer Hopping Kinetics of Vacancies in CrI3 Layers Leading to Monolayer/Bilayer Heterostructures

Abstract

Abstract2D magnets, especially their multilayer structures exhibit promising applications in magnetic sensing and data storage due to magnetoresistance effect. Defects have significant influence on the performance of devices and are widely investigated for typical 2D magnets. However, the defects in multilayer structures are rarely studied. Here, based on density functional theory, an interesting synergy of the interlayer migration of I and Cr vacancies in bilayer CrI3 is found. Cr vacancies attract I vacancies in adjacent layers and greatly reduce the intermigration barrier of I. On the other hand, I vacancies also facilitate the interlayer migration of Cr vacancies. A monolayer/bilayer heterostructure is expected to form after annealing at about 500 K due to the fast hopping of vacancies between layers and the strong driving force for vacancies clustering. The interlayer hopping and merge of vacancies help eliminate defect states in bilayer CrI3. These results provide an atomic‐scale understanding of vacancy migration between CrI3 layers, which is important for defect engineering and applications of bilayer and multilayer CrI3.