Abstract
The c-axis dielectric function ( ϵ c = ϵ 1 c +i ϵ 2 c ) measurement for the heavily underdoped Bi 2Sr 2Y 0.2Ca 0.8Cu 2O y (BSCYCO) was performed to study the dependence of the c-axis conductivity σ 1 c and the c-axis penetration depth λ c on the hole doping. We found that the behaviors of σ 1 c ( T) of the heavily underdoped BSCYCO qualitatively agreed with that of Gaifullin et al. [Phys. Rev. Lett. 83 (1999) 3928]. Comparing with our previous results for the slightly underdoped Bi 2Sr 2CaCu 2O y (BSCCO) [J. Low Temp. Phys. 117 (1999) 1241], we concluded that a large increase of σ 1 c ( T) below ∼0.9 T c for the slightly underdoped BSCCO had not an extrinsic but intrinsic origin, and that the behavior of σ 1 c ( T) strongly depended on the hole concentrations.
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