Abstract
ABSTRACTInterfacial characteristics such as chemical reaction, metal diffusion, and morphology were investigated for Cr/BCB and Ti/BCB structures. Using Auger and XPS depth profiling, the formation of Ti carbide and Cr oxide was confirmed at the metal/BCB interface. Annealing at 250 °C for extended time periods resulted in diffusion of Cr and Ti into the BCB and subsequent formation of CrSi2and Ti-Si compound precipitates. The reaction is a thermal diffusion controlled process which was dependent on time and temperature. It was also found that Ar backsputtering treatment on BCB film before metallization was found to roughen the surface resulting in metal spikes which penetrate into the BCB film.
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