Abstract
A heterostructure of (001)PZT(53/47)/(110)SrRuO3(SRO) was deposited on a miscut (001)SrTiO3(ST) substrate by a magnetron sputtering. The film thickness of the PZT and SRO ranged from 100nm to 200nm. The miscut angles were typically 1.7°. The heterostructure was grown on the miscut ST substrates under a step-flow growth. The heterostructure was tightly bonded to the ST substrate without an interfacial layer. The sputtered PZT thin films were tetragonally deformed with c=4.16 Å (bulk c-lattice parameter, 4.14 Å). A room temperature dielectric constant of the PZT thin films was 200 to 300 at 1kHz. The P/E hysteresis measurements indicated that the saturation polarization Ps was 40 μ C/cm2 with a coercive field Ec of 400 kV/cm to 500 kV/cm. The Ec observed was one order of magnitude higher than a bulk value for PZT. The high values of Ec were observed in a perfect c-domain orientation without an interfacial layer or 90° domains.
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