Abstract
Four materials—Al 2O 3, TiB x, VB x, and TaB x ( x < 2)-with thicknesses from 50 to 200 Å were evaluated as interfacial reaction barriers between titanium and SiC in a thin film model system. Two of these materials—Al 2O 3 and TiB x-show effectiveness in slowing the interdiffusion and reaction of titanium and SiC under normal vacuum annealing at 820°C. None of the four materials shows any significant effect on the reaction in rapid thermal annealings at 900 and 1000°C, most probably owing due to thermal shock influences on the thin film system. The first product of the reaction between titanium and SiC is Ti 5Si 3, regardless of barrier.
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