Abstract
Abstract In/Cu 2 Se couples were reacted at 623 K and 723 K for 1800–14,400 s. In 4 Se 3 and non-planar finger-type CuInSe 2 were formed at the In/Cu 2 Se interface. The η-Cu 2 In phase was formed with longer reaction time. In addition to these phases formed at the interfaces, precipitates of CuInSe 2 formed in the Cu 2 Se substrate and chunky CuInSe 2 phase formed at the end of the Cu 2 Se substrate. Results in the In/Cu 2 Se/Ni couple reacted at 723 K show that the reaction phases at the In/Cu 2 Se interface and the CuInSe 2 precipitates in the Cu 2 Se substrate are the same, but there is no chunky CuInSe 2 phase at the Cu 2 Se end adjacent to Ni. The CuInSe 2 precipitates in the Cu 2 Se substrate are formed due to supersaturation of indium caused by a decrease in solubility at lower temperatures. The non-planar morphology of the CuInSe 2 phase at the interface is caused by the fast diffusion of indium, the segregation and preferred facet growth of the CuInSe 2 phase. However, the mechanism for the formation of the chunky CuInSe 2 is not clear and further study is required.
Published Version
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