Abstract
Perovskite light-emitting diodes (PeLEDs) are promising candidates for display and solid-state lighting. Different from ITO-based devices, the Si-based PeLEDs are of significant application potential in integrated optoelectronics. Here we demonstrate the fabrication of CsPbBr3 PeLEDs on n-Si by tailoring the interfaces of perovskite layers. Green electroluminescence is achieved by spin-coating of CsPbBr3 nanofilms sandwiched within the ethoxylated polyethyleneimine (PEIE) modified ZnO nanofilms as the electron transport layers on Si, and the surficial residual Poly(9-vinylcarbazole) (PVK) layers formed by simple addition in the anti-solvent without additional process. The removal of surficial ligands and the crystallization of atomic layer deposited ZnO nanofilms by annealing are critical for the subsequent deposition of luminescent CsPbBr3 layers, and the PVK layers acting as the hole transport layer enhance the resistance to ambient environment. The thickness control of the PEIE-modified ZnO and residual PVK layers results in intense luminance with good stability, the emission peaking at 500 nm exhibits the external quantum efficiency of 5.1 % and the maximum luminance of 7280 cd/m2. This approach on Si-based PeLEDs would be of application potential in the photonics compatible with micro-electronics, and paves the way for the commercialization of low-cost perovskites and printed electronic devices.
Published Version
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