Abstract
High-k materials deposited directly on silicon exhibit an interfacial layer between the grown layer and the underlying substrate. This is of particular concern in metal–oxide–semiconductor technologies where these layers have a deleterious effect on the overall capacitance of the resulting devices. In this letter, the growth and properties of this silicatelike interfacial layer are examined after postdeposition anneals in a vacuum, inert, and oxidizing atmospheres. X-ray reflectivity, Fourier transform infrared spectroscopy, and x-ray photoelectron spectroscopy have been used to characterize the growth and properties of this interfacial layer.
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