Abstract
The interface between amorphous diamond films deposited by a filtered arc and germanium substrate was characterized by X-ray photoelectron spectroscopy. The coherent energy shifts of carbon and germanium photoelectron lines with prolonged etching time confirm the existence of an amorphous germanium carbide phase consisting of nonhomogeneous components in the interfacial region. This compound forms a buffer layer with a gradient of composition and microstructure from the substrate to the film and is beneficial to film adhesion.
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