Abstract
Microscopic and macroscopic field emission properties of amorphic diamond films on n- and p-type silicon substrates were studied by combined scanning tunneling microscopy/spectroscopy and integral field emission I–V measurements. Microscopic scanning tunneling spectroscopy showed that amorphic diamond films on n-Si have lower threshold voltage and higher emission current than amorphic diamond films on p-Si. The observed rectification characteristics suggest that amorphic diamond on n-Si is an ideal forward-biased p-n junction cold cathode emitter; however, there is no significant difference between these two structures by integral field emission I–V measurements. Conversion of the smooth amorphic diamond film into porous sp3/sp2 composites with sharp features under electric fields higher than 50 V/μm, followed by preferred electron emission from the porous composite sites of high transconductance, was believed to be the cause.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
