Abstract
A series of Ni80Fe20/poly(3-hexylthiohene) (P3HT)/Fe organic spin valves (OSVs) have been prepared by ion beam assisted deposition combined with spin coating technique. A negative magnetoresistance (MR) with the value of 0.08% at room temperature is observed, exhibiting an inverse spin-valve effect, indicating that the MR behavior in Ni80Fe20/P3HT/Fe spin valve is distinctive and different from that in the Co-based P3HT spin valves. After increasing the bombarding energy of the top electrode, an additional positive MR is observed at low magnetic field range. By comparing with the MR under different relative direction of electric current and magnetic field in P3HT/Fe bilayers, the positive MR observed in OSVs is attributed to the anisotropic magnetoresistance (AMR) of the Fe/P3HT interfacial layer. These experimental results demonstrate that the interfacial layer plays an important role in the MR behavior of OSVs. On one hand, the interfacial layer adjusts the electronic structure to induce the inverse spin-valve effect; on the other hand, it affects the magnitude of MR. These results can help us understand the role of the interactions between organic semiconductors and metal electrodes in the organic spintronic systems.
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