Abstract
Perovskite solar cells (PSCs) have attracted a lot of attention from researchers as the most promising photovoltaic devices due to their outstanding power conversion efficiency (PCE) and low-cost. Although the PSC have reached a PCE over 25%, the interface between the perovskite and hole transport layer (HTL) still is a crucial factor limiting higher PCE and long-term stability. In this work, we choose an organic molecule Bis(trifluoromethyl)benzo amide (BTFZA) to passivate defects at the perovskite/HTL interface. Owing to a strong interaction with uncoordinated Pb2+, the BTFZA effectively passivated the surface defects, remarkably promoted carrier transportation. As a result, the perovskite device based on BTFZA surface modification showed a PCE increase of 16.4% over the control device. Especially, the fill factor (FF) and the open-circuit voltage (VOC) of the modified device increased significantly. In addition, the unencapsulated BTFZA-modified device maintains better PCE compared to the control device after aging for over 600 h in ambient air with extreme humidity and temperature conditions. Results suggested that the introduction of BTFZA is an effective way to regulate the surface of perovskite film aiming at highly efficient and stable perovskite solar cells.
Published Version
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