Abstract
Strain-balanced InAs/GaSb superlattices (SLs) with GaAs-type interfaces (IFs) were grown by metalorganic chemical vapor deposition (MOCVD) on InAs substrates at different temperatures. High-angle annular dark-field (HAADF) imaging in a Cs-corrected scanning transmission electron microscope was utilized to analyze quantitatively the interfacial structure features of InAs/GaSb SLs. InAs-on-GaSb IFs were found to be more abrupt and strained than GaSb-on-InAs IFs. With increasing the growth temperature, the interfaces of strain-balanced InAs/GaSb SLs become narrower and contain more GaAs content. Formation of more GaAs in the IFs is considered to account for the improvement of SL interfacial quality by optimizing the specific growth conditions for the superlattices.
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