Abstract
The interfacial characteristics and band alignments of high-k ZrO2 on p-GaAs have been investigated by using x-ray photoelectron spectroscopy and electrical measurements. It has been demonstrated that the presence of Si interfacial passivation layer (IPL) improves GaAs metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, and hysteresis. It is also found that Si IPL can reduce interfacial GaAs-oxide formation and increases effective valence-band offset at ZrO2∕p-GaAs interface. The effective valence-band offsets of ZrO2∕p-GaAs and ZrO2∕Si∕p-GaAs interfaces are determined to be 2.7 and 2.84eV, while the effective conduction-band offsets are found to be 1.67 and 1.53eV, respectively.
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