Abstract
A quantitative method to simulate the electron scattering at the interface of two material layers in thick samples is presented here. The samples are analyzed by Scanning Transmission Electron Microscopy (STEM) in a Tecnai F30 using a High Angle Annular Dark-Field (HAADF) detector with a collection range 55 mrad to 245 mrad. At the interface of a high-density and low-density material an increase in the HAADF signal for thick TEM samples can be observed. We report here the simulated HAADF detector intensity across the interface of two materials using Python programming language and its comparison with experimental results. The electron atomic scattering factor f e (s) for a complex potential is given by:
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
