Interfacial and electrical properties of ZrxTi1−xO4 (x=0.66) films deposited by liquid-delivery metal organic chemical vapor deposition to be used as high-k gate dielectric

Abstract

Zr x Ti 1 − x O 4 (x=0.66) films were deposited on p-type Si (100) substrate using liquid-delivery metal organic chemical vapor deposition using Zr(O–C3H7)2{(C11H19O2)2} and Ti(O–C3H7)2{(C11H19O2)2} precursors. Postdeposition rapid thermal annealing was performed in N2 ambient to improve the electrical characteristics of the films. The postdeposition annealed samples show excellent electrical characteristics, such as low values of effective oxide charge density, flatband voltage, hysteresis, oxide trap charge density, and interface state density. No metal silicides were found in the films. A minimum leakage current density of the order of ∼10−5A∕cm2 at a bias voltage of −1V has been obtained even after annealing at 800°C.