Interfacial and Electrical Characterization in Metal–Oxide–Semiconductor Field-Effect Transistors with CeO2 Gate Dielectric

Abstract

Metal–oxide–semiconductor capacitors (MOSCs) and MOS field-effect transistors (MOSFETs) incorporating cerium dioxide (CeO2) dielectrics were fabricated and investigated. In this work, the electrical and interfacial properties were characterized by capacitance–voltage (C–V) and current–voltage (I–V) measurements. The density of interface trap per unit area (Nit), the density of interface trap per unit area and energy (Dit), the energy distribution of interface trap density, and the effective capture cross section (σs) were studied in details. Experimental results showed that the Nit, Dit, and σs were about 3.4×1010 cm-2, 7.3×1010 cm-2 eV-1, and 9.0×10-15 cm2, respectively. In addition, a comparison of interfacial properties among several gate dielectrics was made.