Abstract
Redistribution of interface trap capacitance (Cit) and deep depletion (D.D.) behavior was observed in non-planar substrate MOS capacitors with ultra thin oxides grown by anodic oxidation (ANO). We find the D.D. electrical characteristics between the non-planar and planar samples are different. The minority carrier crowding induced low frequency effect and corner E-field crowding induced D.D. was observed in non-planar substrate MOS capacitors. Moreover, the deep depletion behavior of non-planar sample after constant voltage stress (CVS) was also explored. The non-planar devices exhibit significant two peaks distribution in Cit after CVS due to multiple surfaces effect. It was found that the multiple surfaces effect induces additional interface trap of acceptor-like. However, the interface trap characteristic of planar sample is mainly donor-like.
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