Abstract
Structures of interfaces between AlN and MgB2 thin films were investigated by cross-sectional transmission electron microscopy. These layers were deposited on sapphire substrate with different orientations by a conventional method. A thick amorphous layer was present between films in the case of r-plane substrate, whereas many AlN crystals were grown epitaxially in the case of c-plane substrate. Then NbN∕AlN∕MgB2 trilayers were intentionally fabricated on sapphire c-plane and showed Josephson and quasiparticle tunneling property with small subgap leakage current.
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