Abstract
The ion-beam-induced epitaxial crystallization rate of amorphous Si has been measured on crystal substrates with orientations every 5° from (100) to (111) to (011). The data are explained using a growth-site-limited model wherein a beam-induced defect flux to the interface results in a growth rate dependent on the interfacial bonding configuration. This model helps clarify the relationship of ion-beam-induced epitaxy with thermal solid phase epitaxy.
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