Abstract
A novel type of shallow interface state in junctions of two semiconductorswithout band inversion is identified within the envelope functionapproximation, using the two-band model. It occurs in abrupt junctions whenthe interband velocity matrix elements of the two semiconductors differ and thebulk dispersion curves intersect. The in-plane dispersion of theinterface state is found to be confined to a finite range of momenta centeredaround the point of intersection. These states turn out to exist also ingraded junctions, with essentially the same properties as in the abrupt case.
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