Abstract
We have studied the influence of interface roughness scattering on the mobility of two-dimensional electron gas (2DEG) in GaAs–AlGaAs modulation-doped heterostructures (MDH) both experimentally and theoretically. When the background ionized impurity concentration in the GaAs layer is smaller than 2.5×1015 cm−3, our investigation shows that interface roughness scattering is the dominant scattering mechanism in the high 2DEG density (Ns≥5×1011 cm−2) GaAs–AlGaAs MDH. We also demonstrate that interface roughness scattering is about an order of magnitude stronger than alloy disorder scattering in GaAs–AlGaAs MDH if the AlGaAs/GaAs interface fluctuation is only one monolayer of GaAs.
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