Abstract
In this paper we focus on the problem of interface roughness scattering which is treated non-perturbatively by incorporating the effects of scattering as a boundary condition for the Boltzmann transport equation. The scattering probability is derived and implemented in an ensemble Monte Carlo simulation of electron transport in relaxed and strained Si n-MOSFETs. We compare the internal device behaviour as a function of the interface quality between short channel relaxed and strained Si n-MOSFETs. We provide further evidence that the strained Si/SiO2 interface is less rough, requiring a longer correlation length and smaller rms height for the strained Si/SiO2 interface. The high doping densities encountered necessitate the self-consistent use of degenerate (Fermi–Dirac) statistics.
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