Interface-roughness parameters in InAs quantum wells determined from mobility

Abstract

For zero temperature we present theoretical results for the transport properties of the electron gas in InAs quantum wells in the presence of interface-roughness scattering. We show how to analyze experimental data in connection with interface-roughness scattering. By comparison with recent experimental results obtained for the mobility of InAs quantum wells, we determine the interface roughness parameters as Δ=3.2Å and Λ=14Å. We predict the single-particle relaxation time (Dingle temperature) and a possible metal-insulator transition in these InAs quantum well structures.