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Abstract
We report Raman measurements of the LO phonon modes confined in GaAs/AlAs quantum wells grown by refined MBE with and without growth interruption and by migration enhanced epitaxy (MEE). The energies of the confined LO phonon modes lie close to the values expected from the bulk GaAs phonon dispersion. We show that the higher order confined phonon modes are more sensitive to roughness than the lower order modes.
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