Abstract
As device dimensions in nanoscale structures and mesoscopic devices are reduced, the characteristics and interactions of dimensionally-confined longitudinal-optical (LO) phonons deviate substantially from those of bulk polar semiconductors. This account emphasizes the properties of LO-phonon modes arising in polar-semiconductor quantum wells and quantum wires. In particular, this review highlights recent results of both microscopic and macroscopic models of LO phonons in polar-semiconductor quantum wells and quantum wires with a variety of cross sectional geometries. Emphasis is placed on the dielectric continuum model of confined and interface phonons. In addition, this review provides brief discussions of how carrier-LO-phonon interactions change in the presence of dynamical screening. Finally, the use of metal-semiconductor heterointerfaces to reduce unwanted inelastic scattering in nanoscale electronic and optoelectronic structures is discussed.
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