Abstract
Interface roughness in double-barrier resonant-tunneling devices affects the lateral electron motion in the quantum well and can give rise to subsidiary subbands or quasibound states in the well. We demonstrate that a shoulder frequently appearing beyond the principal resonance peak in the current–voltage characteristic can result from the resonant tunneling via those states.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have