Abstract
Interface resistance is studied by using the Landauer formula which relates the resistance to the quantum mechanical transmission coefficient. A simple rederivation of the Landauer formula is given. Using a step-like potential barrier as a model for the metal-semiconductor contact an analytical expression for the effective Richardson constant is derived. As an other application the grain boundary resistance in polycrystalline semiconductors is studied. The short-range potential fluctuation associated with the grain boundary is described by a rectangular potential barrier. The results for the grain boundary limited mobility cover both the strong and weak scattering regimes.
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