Abstract
The surface of GaAs(100) and InAs(100) substrates thermally treated in selenium vapor has been investigated by transmission electron microscopy (TEM) and reflection high-energy electron diffraction. Transmission electron microscopy and high-energy electron diffraction data on these heterostructures confirms the epitaxial pseudomorphic growth of the gallium selenide Ga2Se3(100) and indium selenide In2Se3(100) phases with ordered stoichiometric cation vacancies. A model of the atomic structure of the Ga2Se3(100) and In2Se3(100) surfaces is proposed, and the 2 × 2 reconstruction of the GaAs(100) and InAs(100) surfaces after treatment in selenium vapor is discussed within this model.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
