Abstract
The resistive switching evolution of NiOx/Al2O3 in Pt/NiOx/Al2O3/n+–Si structure was investigated with postannealing time. When increasing the postannealing time, larger voltage/current is needed to turn on/turn off the structure, respectively. Large memory resistance window can be obtained by the interface modulation of NiOx/Al2O3. For the fresh structure, the low resistance state (LRS) obeys Ohmic conduction mechanism and the high resistance state (HRS) fits Poole–Frenkel-like behavior. With the postannealing time increase, the reaction between NiOx and Al2O3 occurs. Finally, the Pt/Ni–Al–O/n+–Si structure forms. Schottky emission mechanism has dominated in the HRS, while the LRS shows Poole–Frenkel-like behavior.
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