Abstract
Electrical transport in thermally stable 2, 7-bis [N, N-bis (4-methoxy-phenyl) amino]-9, 9-spirobifluorene (MeO-Spiro-TPD) thin films has been investigated as a function of temperature and organic layer thickness. ITO/MeO-Spiro-TPD interface was found to be injection limited and has been studied in detail to find barrier height for hole injection. The thickness of tetra-fluoro-tetracyano-quinodimethane thin films were optimized to be used as hole injection buffer layer which resulted in switching of charge transport mechanism from injection limited to space charge limited conduction above a critical thickness of 3 nm. Hole mobility has been measured using transient space charge limited conduction (SCLC), field dependent SCLC, and top contact transistor characteristics. The charge carrier transport in interface modified hole only devices was analysed using Gaussian disorder model. The thermal stability of MeO-Spiro-TPD has been investigated by atomic force microscopy and X-ray diffraction studies. The study indicates a thermally stable and highly efficient hole transport material for application in organic semiconductor based devices.
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