Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials

Abstract

Palladium-doped and (Cu, Pt)-doped high reliability gold wires were used to form wire bond interconnects on aluminum IC metallization. By isothermal annealing of wire bond samples the formation of intermetallic Au–Al phases was stimulated. SEM/EBSD investigations of the phase regions exhibited significantly slower isothermal growth rates compared to a reference gold wire. Correlated TEM, STEM–EDXS and nanobeam diffraction analyses revealed that Pd is preferentially incorporated into the Au8Al3 intermetallic forming a new stable phase but additionally can obviously form a new Pd-rich ternary intermetallic. In comparison, Cu dopants are also accumulated into a new Al–Au–Cu phase while Pt is rather found agglomerating within grain boundaries and interfaces. These results suggest a diffusion barrier model that allows discussing how wire doping can affect the bond contact microstructure, thus increasing the lifetime of bond contacts.