Abstract
Recent work has demonstrated the existence of nonthermal illumination effects on the diffusion of boron, arsenic, and isotopic silicon ion-implanted into silicon for ultra-shallow junction applications. In some cases, the degree of electrical activation is affected as well. The effects arise from super-bandgap light's direct action on bulk point defects via changes in their charge state. By contrast, the present work demonstrates the existence of a distinct mechanism whereby light acts indirectly on bulk defects via changes at a nearby interface. The changes occur in interfacial annihilation probability and/or electric potential, and affect the efficiency with which the interface absorbs point defects emitted by extended end-of-range defects during annealing.
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