Interface Influence on the Long-Wave Auger Suppressed Multilayer N+ $\pi$ P+p+n+ HgCdTe HOT Detector Performance

Abstract

This paper reports on N+- $\pi $ interface influence on the performance: dark current and response time of multilayer long-wave infrared mercury cadmium telluride (MCT - HgCdTe) N+ $\pi$ P+p+n+ detector under high operating temperature conditions, $T = 230$ K. A detailed analysis of the dark current and response time as a function of device architecture, i.e., N+- $\pi $ interface and applied bias was performed to optimize the working conditions. Dark current of the long-wave HgCdTe detector with 50% cutoff wavelength of $\lambda _{\mathbf {\textit {co}}} \approx 10.6~\mu \text{m}$ at $T = 230$ K was reduced from $\approx ~62$ to 12 A/cm $^{\mathrm {\mathbf {2}}}$ , while response time could be reduced to $\approx ~52$ ps for low-voltage operation, $V = 200$ mV.