Abstract
The diamond film synthesized on silicon substrate by hot-filament CVD has been used to fabricate photoconductive and photodiode structures for the detection of UV light. The photoconductive device which the higher boron doped has a greater different response between UV light and visible light more than the lower one, but it has more dark current and response time. The Al Schottky photodiode fabricated on the B-doped diamond film showed lower dark current and shorter response time than photoconductive device.
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