Abstract
摘要 利用同步辐射光电发射谱研究了Co与CH\-3CSNH\-2处理的S钝化GaAs(100)的界面形成.发现 其界面反应较弱，Co覆盖层达到0.8nm时，形成稳定的界面.GaAs表面上和S原子形成桥 键的Ga原子与Co发生交换反应并扩散到覆盖层中，形成Co—S键.Co覆盖层表面无偏析As的出现，与Co/GaAs(100)界面不同，这表明GaAs表面的S钝化可有效地阻止As原子向覆盖层的扩散. Abstract 作者及机构信息 张发培1, 郭红志1, 徐彭寿1, 祝传刚1, 陆尔东1, 张新夷1, 梁任又2 (1)中国科学技术大学国家同步辐射实验室，合肥 230029; (2)中国科学技术大学结构分析开放实验室，合肥 230026 基金项目: 国家自然科学基金(批准号：19574042)资助的课题. Authors and contacts Zhang Fa－pei1, Guo Hong－zhi1, Xu Peng－shou1, Zhu Chuan－gang1, Lu Er－dong1, Zhang Xin－yi1, Liang Ren－you2 (1)中国科学技术大学国家同步辐射实验室，合肥 230029; (2)中国科学技术大学结构分析开放实验室，合肥 230026 参考文献 施引文献
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