Interface formation and interaction of Fe overlayer on S-passivated GaAs(100)

Abstract

We have studied the interface formation and electronic structure of an Fe overlayer deposited on S-passivated GaAs(100). In the first stage of deposition, Fe clusters were formed near S atoms. Compared to Fe/GaAs(100), the sulfur passivation weakens the reaction between As and Fe. It is beneficial to the magnetism at the interface. A magnetic ordering feature could be found at higher coverage due to large exchange splitting.