Abstract
Thin film growth and fabrication process for YBa2Cu3Oy/PrBa2(Cu1−xCox)3Oy/YBa2Cu3Oy ramp-edge type junctions have been studied. Preferable conditions to maintain a stable ramp surface were investigated by comparative measurements of the surface morphology of ramp-edge structures of epitaxial bilayers of SrTiO3/YBa2Cu3Oy annealed at various conditions of temperature and oxygen partial pressures. The stability of the ramp-edge surfaces was discussed in terms of the equilibrium reaction of YBa2Cu3Oy, and the degradation of surfaces by damages through the fabrication process was concluded to be the main factor for the decomposition at high temperatures. A two-step etching technique and annealing with atomic oxygen activated by microwave enabled the ramp surfaces to be maintained quite stable even at the deposition temperature of barrier layers. The ramp surface of YBa2Cu3Oy annealed under 4×1014 cm−2 s−1 activated oxygen flux gave no evidence of decomposition at 800°C except for a slight decrease in thickness in the YBa2Cu3Oy layer. In ECR (electron cyclotron resonance)-processed junctions, resistively shunted junction (RSJ) type current–voltage characteristics were observed and the magnetic field dependence of the critical current showed a Fraunhofer pattern.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
