Abstract

Interface engineering is an effective strategy for significantly providing performance improvements in logic operations and information storage techniques, given the quantum effects characteristic of pristine two-dimensional ferromagnetic (FM) materials. Furthermore, the van der Waals (vdW) heterostructures enable a more efficient design of logic components. Herein, two novel designs of van der Waals heterostructures are proposed, black-phosphorus (BP)/TMPS4(TM = Cr, Fe-Mn), where the CrPS4 relies on odd and even layers for FM state - antiferromagnetic (AFM) state alternation, which is used to modulate BP with high hole mobility but no magnetism. Based on the first principles, the simulation results show that the two heterojunctions exhibit high stability, carrier mobility, and thermoelectric effects, of which the BP/CrPS4 heterojunction is specifically modulated to a type II electronic bandstructure. These two structures are applied in multi-source logic devices. The device performances show that the devices have spin Sebeck effect (SSE), perfect spin filtering effect (SFE), high extinction ratio (1347), and high thermal magnetoresistivity (1011). The above results suggest BP/TMPS4 bilayers as promising candidates for spin-based vdW devices and facilitate the future development of atomically thin magnetic information storage.

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