Interface barrier height in ZnSe/GaAs structures

Abstract

The electronic transport characteristics of Schottky metal/ n-ZnSe/ n + GaAs structures are presented. The small-signal-admittance characteristics of these structures show certain distinct features which are located at a bias point dependent on the interface barrier height. In most cases these features are sharp slope changes in the characteristics and their shapes are determined by the modulation of the effective hetero-interface barrier height with bias. In some samples, these features are seen in the form of sharp minima, and they correspond to cases where the interface pinning is strong. From the bias location of these features, the interface barrier height in thick n-ZnSe/ n + GaAs(100) structure is found to be 0.4–0.5 eV for electrons injected into ZnSe.