Effect of annealing charge injection and electron beam irradation of the Si-SiO2 interface barrier heights and on the work function difference in MOS structures

Abstract

In this work we report the effects of postmetallization forming gas (F.G.) annealing, electron photoinjection and electron beam irradation on the effective work function difference (Φms) and effective interface barrier heights at the metal‐insulator and semiconductor‐insulator interfaces (Φm and Φs, respectively) in Al‐SiO2‐Si (MOS) structures.It is shown that the variations of Φms are generally due to the simultaneous modifications of the barrier heights at both interfaces.Special attention is paid to the phenomena taking place at the Si‐SiO2 interface.