Interdiffusion of Si and Ge Atoms during Gas-Source MBE of Ge on Si(100) at 500–800°C

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Germanium growth on Si(100) using GeH4 gas-source molecular beam epitaxy has been performed in the temperature range of 500–800°C with the grown film thickness of about 1000 Å. From electron-probe microanalysis, Raman spectroscopy, and Auger electron spectroscopy measurements, it was indicated that a noticeable interdiffusion of Si and Ge atoms occurred during growth in this temperature range.