Abstract
We report the results of several complementary measurements which relate the Fermi-level position at metal/CdTe interfaces to bulk crystal quality, interdiffusion, and directly observed interface states. Defect states form at the Au/CdTe interface and move thousands of angstroms into the semiconductor. The presence of deep levels in the bulk correlates with the Au Schottky barrier heights measured for different CdTe crystals. We demonstrate control of interdiffusion, interfacial state formation, and band bending with a reactive interlayer.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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