Abstract
The process of interdiffusion and compound formation in Mo/Pd/Si thin films was studied between 250 and 750°C via sheet resistance measurements, X-ray diffraction, Rutherford backscattering spectrometry and Auger electron spectroscopy. The results indicate that thermal annealing of the Mo/Pd/Si thin film couples between 250 and 475°C lead to PdSi interaction, Pd 2Si compound formation and consequently a small increase in the sheet resistance. In contrast, exposure of the Mo/Pd/Si thin films to temperatures higher than 475°C lead to MoPd 2Si interaction in addition to PdSi interaction, MoSi 2 compound formation and a dramatic increase in the sheet resistance. The influence of interdiffusion and compound formation on the interface morphology in the Mo/Pd/Si system was studied, and the implications of these observations to a very-large-scale integration contact metallization utilizing an Mo/Pd 2Si/Si system are discussed.
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