Abstract
We have directly studied the elemental depth profiles of Au/Ti and Au/Pt/Ti multiple-layers, which are candidates as ohmic materials for a p-type diamond substrate, grown on diamond (001) surfaces at room temperature (RT) and 550 °C using Rutherford backscattering method. Significant interlayer diffusion between Au and Ti is observed for the samples without a sandwiched Pt layer, resulting in diffusion of some Ti atoms to the surface. On the other hand, the trilayer structure of Au/Pt/Ti forms a thermally stable electrode up to 1000 °C. It is also found that the interfacial TiCx layer grown at 550 °C is thicker than that deposited at RT followed by post-deposition annealing at 550 °C. The effective thickness of the Pt layer is estimated to be more than 20 nm to prevent Ti segregation to the surface.
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