Abstract
Variation of the depth-concentration profiles of manganese atoms implanted into silicon was studied by the Rutherford backscattering (RBS) method in samples irradiated to various doses and annealed at different temperatures. The results are consistent with the analogous data obtained by an independent method. The post-implantation thermal annealing affects the distribution of Mn and other impurities, in particular, oxygen. The RBS method provides data both on the distribution of implanted dopants and on their interaction with other impurities.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
