Abstract
We have used the interdiffusion of a multiple quantum well sample due to a thin source of vacancies, as a probe, to simultaneously measure the interdiffusion coefficient, diffusion coefficient for group III vacancies in GaAs and the background concentration of these vacancies in a single experiment. We have shown that the interdiffusion at all temperatures is governed by a constant background concentration of vacancies in the material and that this background concentration is the concentration of vacancies in the substrate material. The measured vacancy concentration is around 2\ifmmode\times\else\texttimes\fi{}${10}^{17}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$. This result shows that the vacancy concentrations in GaAs are not at thermal equilibrium concentrations as has been widely assumed. Rather it has value which is ``frozen in,'' probably at the GaAs crystal growth temperature. The activation energy found for the intermixing of InGaAs/GaAs is shown to be governed solely by the activation term for vacancy diffusion which is calculated to have an activation energy of 3.4\ifmmode\pm\else\textpm\fi{}0.3 eV.
Published Version
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