Abstract
AbstractThe origin of indium fluctuations in indium‐rich quantum wells (QWs) is of high interest for direct green laser diodes. We present the correlation of morphological features such as macrosteps investigated by AFM measurements and wavelength fluctuations seen in cathodoluminescence images of InGaN/GaN QWs grown by metal organic vapor phase epitaxy. We observe an opposed wavelength shift of 5 nm in the vicinity of macrosteps for the investigated UV and green InGaN QW samples. We present a growth model taking adsorption, desorption, and migration processes into account to explain this difference via a temperature dependent change in indium incorporation in the vicinity of the observed macrostep edges.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
